document number: 93506 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 29-sep-08 1 standard recovery diodes (stud version), 25 a 25f(r) series vishay high power products features ? high surge current capability ? stud cathode and stud anode version ? wide current range ? types up to 1200 v v rrm ? rohs compliant typical applications ? battery charges ? converters ? power supplies ? machine tool controls electrical specifications note (1) avalanche version only available from v rrm 400 v to 1200 v product summary i f(av) 25 a do-203aa (do-4) rohs compliant major ratings and characteristics parameter test conditions values units i f(av) 25 a t c 120 c i f(rms) 40 a i fsm 50 hz 356 a 60 hz 373 i 2 t 50 hz 636 a 2 s 60 hz 580 v rrm range 100 to 1200 v t j - 65 to 175 c voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak voltage v v r(br) , minimum avalanche voltage v (1) i rrm maximum at t j = 175 c ma 25f(r) 10 100 150 - 12 20 200 275 - 40 400 500 500 60 600 725 750 80 800 950 950 100 1000 1200 1150 120 1200 1400 1350
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93506 2 revision: 29-sep-08 25f(r) series vishay high power products standard recovery diodes (stud version), 25 a note (1) available only for avalanch e version, all other par ameters the same as 25f forward conduction parameter symbol test conditions values units maximum average forward current at case temperature i f(av) 180 conduction, half sine wave 25 a 120 c maximum rms forward current i f(rms) 40 a maximum on-repetitive peak reverse power p r (1) 10 s square pulse, t j = t j maximum 10 k/w maximum peak, one-cycle forward, non-repetitive surge current i fsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 356 a t = 8.3 ms 373 t = 10 ms 100 % v rrm reapplied 300 t = 8.3 ms 314 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 636 a 2 s t = 8.3 ms 580 t = 10 ms 100 % v rrm reapplied 450 t = 8.3 ms 410 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 6360 a 2 s low level value of threshold voltage v f(to)1 (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 0.80 v high level value of threshold voltage v f(to)2 (i > x i f(av) ), t j = t j maximum 0.90 low level value of forward slope resistance r f1 (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 6.80 m high level value of forward slope resistance r f2 (i > x i f(av) ), t j = t j maximum 5.70 maximum forward voltage drop v fm i pk = 78 a, t j = 25 c, t p = 400 s rectangular wave 1.30 v thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating temperature range t j - 65 to 175 c maximum storage temperature range t stg - 65 to 200 maximum thermal resistance, junction to case r thjc dc operation 1.5 k/w maximum thermal resistance, case to heatsink r thcs mounting surface, smooth, flat and greased 0.5 allowable mounting torque not lubricated threads 1.5 + 0 - 10 % (13) n m (lbf in) lubricated threads 1.2 + 0 - 10 % (10) n m (lbf in) approximate weight 7g 0.25 oz. case style see dimensions - link at the end of datasheet do-203aa (do-4)
document number: 93506 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 29-sep-08 3 25f(r) series standard recovery diodes (stud version), 25 a vishay high power products note ? the table above shows the increment of thermal resistance r thjc when devices operate at di fferent conduction angles than dc fig. 1 - current ratings characteristics f ig. 2 - current ratings characteristics fig. 3 - forward powe r loss characteristics r thjc conduction conduction angle sinusoidal conduction rec tangular conduction test conditions units 180 0.28 0.24 t j = t j maximum k/w 120 0.39 0.41 90 0.50 0.54 60 0.73 0.75 30 1.20 1.21 100 110 120 130 140 150 160 170 180 0 5 10 15 20 25 30 30 60 90 120 180 maximum allowable case temperature (c) conduction angle average forward current (a) 25f(r) series r (dc) = 1.5 k/w thjc 100 110 120 130 140 150 160 170 180 0 5 10 15 20 25 30 35 40 45 dc 30 60 90 120 180 maximum allowable case temperature (c) conduction period average forward current (a) 25f(r) series r (dc) = 1.5 k/w thjc 0 25 50 75 100 125 150 175 maximum allowable ambient temperature (c) r = 1 k / w - d e l t a r t h s a 2 k / w 3 k / w 4 k / w 6 k / w 8 k / w 1 2 k / w 2 0k / w 4 0 k / w 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 average forward current (a) rms limit maximum average forward power loss (w) conduction angl e 180 120 90 60 30 25f(r) series t = 175c j
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93506 4 revision: 29-sep-08 25f(r) series vishay high power products standard recovery diodes (stud version), 25 a fig. 4 - forward power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - forward volt age drop characteristics fig. 8 - thermal impedance z thjc characteristics 0255075100 maximum allowable ambient temperature (c) 1 0 k / w 1 5 k / w r = 4 k / w - d e l t a r t h s a 6 k / w 8 k / w 2 0 k / w 3 0 k / w 0 5 10 15 20 25 0 5 10 15 20 25 30 dc 180 120 90 60 30 average forward current (a) rms limit maximum average forward power loss (w) conduction period 16f(r) series t = 175c j 50 100 150 200 250 300 350 110100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) initial t = 175c @ 60 hz 0.0083 s @ 50 hz 0.0100 s at any rated load condition and with rated v applied following surge. rrm j 25f(r) series 0 50 100 150 200 250 300 350 400 0.01 0.1 1 10 peak half sine wave forward current (a) pulse train duration (s) maxi mum non repeti tive surge current initial t = 175c no voltage reapplied rated v reapplied versus pulse train duration. j rrm 25f(r) series 1 10 100 1000 0 0.5 1 1.5 2 2.5 3 3.5 4 t = 25c j instantaneous forward current (a) instantaneous forward voltage (v) t = 175c j 25f(r) series 0.1 1 10 0.001 0.01 0.1 1 10 square wave pulse duration (s) thjc transient thermal impedance z (k/w) 25f(r) series steady state value r = 1.5 k/w (dc operation) thjc
document number: 93506 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 29-sep-08 5 25f(r) series standard recovery diodes (stud version), 25 a vishay high power products ordering information table 1 - current rating: code = i f(av) 2 - f = standard device 3 - none = stud normal polarity (cathode to stud) r = stud reverse polarity (anode to stud) 4 - voltage code x 10 = v rrm (see voltage ratings table) 5 - none = stud base do-203aa (do-4) 10-32unf-2a m = stud base do-203aa (do-4) m5 x 0.8 (not available for avalanche diodes) device code 5 13 24 25 f r 120 m links to related documents dimensions http://www.vishay.com/doc?95311
document number: 95311 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 30-jun-08 1 do-203aa (do-4) outline dimensions vishay semiconductors dimensions in millimeters (inches) 3.30 (0.13) 4.00 (0.16) 5.50 (0.22) min. 10.20 (0.40) max. 11.50 (0.45) 10.70 (0.42) 10/32" unf-2a for metric devices: m5 x 0.8 0.8 0.1 (0.03 0.004) r 0.40 r (0.02) ? 6.8 (0.27) ? 1.80 0.20 (? 0.07 0.01) 3.50 (0.14) 20.30 (0.80) max. 11 (0.43) 2 + 0.3 0 (0.08 ) + 0.01 0
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